LH28F016SAT-70 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F016SAT-70' PDF : 36 Pages View PDF
16M (1M × 16, 2M × 8) Flash Memory
LH28F016SA
AC Characteristics for WE » - Controlled Command Write Operations1
TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tVPWH
tPHEL
tELWL
tAVWH
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHRL
tRHPL
Write Cycle Time
VPP Setup to WE Going High
RP » Setup to CE » Going Low
CE » Setup to WE Going Low
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
CE » Hold from WE High
WE Pulse Width High
Read Recovery before Write
WE High to RY »/BY » Going Low
RP » Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY »/BY » High
tPHWL
tWHGL
tQVVL
RP » High Recovery to WE Going Low
Write Recovery before Read
VPP Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY »/BY » High
tWHQV1
tWHQV2
Duration of Word/Byte Write Operation
Duration of Block Erase Operation
VCC = 3.3 ± 0.3 V
TYP. MIN. MAX.
120
100
480
10
75
75
75
10
10
10
45
0
100
0
1
95
0
9
5
0.3
UNITS NOTE
ns
ns
3
ns
ns
ns
2, 6
ns
2, 6
ns
ns
2
ns
2
ns
ns
ns
ns
ns
3
µs
ns
µs
µs
4, 5
s
4
27
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