LH28F016SAT-70 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

MFG CO.

LH28F016SAT-70

16M (1M × 16, 2M × 8) Flash Memory

Sharp Electronics 

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16M (1M × 16, 2M × 8) Flash Memory

LH28F016SA

DEEP

POWER-DOWN

ADDRESSES (A) VIH

(NOTE 1)

VIL

WRITE

DATA-WRITE

OR ERASE

SETUP COMMAND

WRITE VALID

ADDRESS AND DATA

(DATA-WRITE) OR

ERASE CONFIRM

COMMAND

AUTOMATED

DATA-WRITE

OR ERASE

DELAY

AIN

tAVAV

tAVWH

tWHAX

ADDRESSES (A) VIH

(NOTE 2)

VIL

tAVAV

AIN

tAVWH tWHAX

WRITE READ

EXTENDED

REGISTER

COMMAND

(NOTE 3)

READ

EXTENDED

STATUS

REGISTER DATA

A = RA

READ

COMPATIBLE

STATUS

REGISTER DATA

A = RA

CEX (E) VIH

(NOTE 4) VIL

OE (G) VIH

VIL

VIH

WE (W)

VIL

tWHEH

tELWL

tWHWL

tWLWH

tWHDX

tWHGL

tWHQV 1, 2

tGHWL

DATA (D/Q) VIH

VIL

HIGH-Z

tPHWL

tDVWH

DIN

DIN

tWHRL

RY/BY

(R)

VOH

VOL

DIN

DOUT

DIN

tRHPL

VIH

RP (P) VIL

tVPWH

(NOTE 5)

tQVVL

VPP

(V)

VPPH

VPPL

NOTES:

1. This address string depicts Data-Write/Erase cycles with corresponding verification via ESRD.

2. This address string depicts Data-Write/Erase cycles with corresponding verification via CSRD.

3. This cycle is invalid when using CSRD for verification during Data-Write/Erase operations.

4. CEX is defined as the latter of CE0 or CE1 going LOW or the first of CE0 or CE1 going HIGH.

5. RP low transition is only to show tRHPL; not valid for above Read and Write cycles.

Figure 14. AC Waveforms for Command Write Operations

28F016SAT-14

29

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