LH28F400SU-LC
4M (512K × 8, 256K × 16) Flash Memory
AC Characteristics - Read Only Operations1
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
MIN. MAX. UNITS NOTE
tAVAV Read Cycle Time
150
ns
tAVGL Address Setup to OE» Going Low
0
ns
3
tAVQV Address to Output Delay
150
ns
tELQV CE » to Output Delay
150
ns
2
tPHQV RP » High to Output Delay
750
ns
tGLQV OE» to Output Delay
50
ns
2
tELQX CE » to Output in Low Z
0
ns
3
tEHQZ CE » to Output in High Z
55
ns
3
tGLQX OE» to Output in Low Z
0
ns
3
tGHQZ OE» to Output in High Z
40
ns
3
tOH
Output Hold from Address, CE» or
OE » change, whichever occurs first
0
ns
3
tFLGZ
tFLEL
tFHEL
BYTE Low to Output in High Z
BYTE High or Low to CE » Low
60
ns
3
20
ns
3
NOTES:
1. See AC Input/Output Reference Waveforms for timing measurements.
2. OE » may be delayed up to tELQV - tGLQV after the falling edge of CE » without impact on tELQV.
3. Sampled, not 100% tested.
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