LRS13023 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

MFG CO.

LRS13023

Stacked Chip 8M Flash and 1M SRAM

Sharp Electronics 

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SHARP

LRS13023

38

6.2.5 ALTERNATIVE m-CONTROLLED

WRITES(‘)

V PP--27V-3.6V. TA =O”C to +85”C

NOTES:

1. In systems where n defines the write pulse width (within a longer WE tir&tg waveform), all setup, hold, and

inactive WE times should be measured relative to the a waveform.

2. Sampled, not 100% tested.

3. Refer to Table 4 for valid AIN and DIN for block erase, byte write, or lock-bit configuration.

4. VP, should be held at VP,, (and if necessary m should be held at V m) un$l determination,of block erase, byte

write, or lock-bit configuration success (SR1/3/4/5=0).

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