LRS1383 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LRS1383' PDF : 114 Pages View PDF
LRS1383
20
12. AC Electrical Characteristics for Flash Memory
12.1 AC Test Conditions
Input pulse level
Input rise and fall time
Input and Output timing Ref. level
Output load
0 V to 2.7 V
5 ns
1.35 V
1TTL + CL (50pF)
12.2 Read Cycle
(TA = -25°C to +85°C, F-VCC = 2.7V to 3.3V)
Symbol
Parameter
Notes Min. Max. Unit
tAVAV
Read Cycle Time
85
ns
tAVQV
Address to Output Delay
85
ns
tELQV
F-CE to Output Delay
2
85
ns
tAPA
tGLQV
tPHQV
Page Address Access Time
F-OE to Output Delay
F-RST High to Output Delay
30
ns
2
20
ns
150
ns
tEHQZ, tGHQZ F-CE or F-OE to Output in High - Z, Whichever Occurs First
1
20
ns
tELQX
F-CE to Output in Low - Z
1
0
ns
tGLQX
F-OE to Output in Low - Z
1
0
ns
tOH
Output Hold from First Occurring Address, F-CE or F-OE change 1
0
ns
Note:
1. Sampled, not 100% tested.
2. F-OE may be delayed up to tELQV
tGLQV after the falling edge of F-CE without impact to tELQV.
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