LRS1383
27
13. AC Electrical Characteristics for SRAM
13.1 AC Test Conditions
Input pulse level
Input rise and fall time
Input and Output timing Ref. level
Output load
Note:
1. Including scope and socket capacitance.
0.4V to 2.2V
5ns
1.5 V
1TTL + CL (30pF)(1)
13.2 Read Cycle
Symbol
Parameter
(TA = -25°C to +85°C, S-VCC = 2.7V to 3.3V)
Notes Min. Max. Unit
tRC Read Cycle Time
70
ns
tAA Address access time
70
ns
tACE1 Chip enable access time (S-CE1)
70
ns
tACE2 Chip enable access time (S-CE2)
70
ns
tBE Byte enable access time
70
ns
tOE Output enable to output valid
40
ns
tOH Output hold from address change
10
ns
tLZ1 S-CE1 Low to output active
1
10
ns
tLZ2 S-CE2 High to output active
1
10
ns
tOLZ S-OE Low to output active
1
5
ns
tBLZ S-UB or S-LB Low to output active
1
5
ns
tHZ1 S-CE1 High to output in High-Z
1
0
25
ns
tHZ2 S-CE2 Low to output in High-Z
1
0
25
ns
tOHZ S-OE High to output in High-Z
1
0
25
ns
tBHZ S-UB or S-LB High to output in High-Z
1
0
25
ns
Note:
1. Active output to High-Z and High-Z to output active tests specified for a ±200mV transition from steady state levels into
the test load.