LRS1383 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LRS1383' PDF : 114 Pages View PDF
LRS1383
22
12.4 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance(4)
(TA = -25°C to +85°C, F-VCC = 2.7V to 3.3V)
Symbol
Parameter
tWPB
4K-Word Parameter Block
Program Time
Notes
Page Buffer
Command
is Used or
not Used
2 Not Used
2, 3
Used
F-VPP=VPPH1
(In System)
Min. Typ.(1) Max.(2)
0.05 0.3
0.03 0.12
F-VPP=VPPH2
(In Manufacturing)
Unit
Min. Typ.(1) Max.(2)
0.04 0.12 s
0.02 0.06 s
tWMB
32K-Word Main Block
Program Time
2 Not Used
2, 3
Used
0.38 2.4
0.24 1
0.31 1
s
0.17 0.5 s
tWHQV1/
tEHQV1
Word Program Time
2 Not Used
2, 3
Used
11 200
7 100
9
185
s
5
90
s
tWHOV1/
tEHOV1
OTP Program Time
2 Not Used
36 400
27 185
s
tWHQV2/ 4K-Word Parameter Block
tEHQV2 Erase Time
2
-
0.3
4
0.2
4
s
tWHQV3/ 32K-Word Main Block
tEHQV3 Erase Time
2
-
0.6
5
0.5
5
s
tWHRH1/ (Page Buffer) Program Suspend
tEHRH1 Latency Time to Read
5
-
5
10
5
10
s
tWHRH2/ Block Erase Suspend
tEHRH2 Latency Time to Read
5
-
5
20
5
20
s
Latency Time from Block Erase
tERES Resume Command to Block
6
-
500
500
s
Erase Suspend Command
Notes:
1. Typical values measured at TA=+25 C and nominal voltages. Assumes corresponding lock bits are not set. Subject to
change based on device characterization.
2. Excludes external system-level overhead.
3. Every 16 words data are loaded alternatively into 2 page buffers.
4. Sampled, but not 100% tested.
5. A latency time is required from writing suspend command (F-WE or F-CE going high) until SR.7 going "1" or F-RY/BY
going High-Z.
6. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than
tERES and its sequence is repeated, the block erase operation may not be finished.
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