LRS1383 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

MFG CO.

LRS1383

Stacked Chip 32M Flash and 8M SRAM

Sharp Electronics 

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LRS1383

33

14. Data Retention Characteristics for SRAM

Symbol

Parameter

Note

Min. Typ.(1) Max.

Unit

(TA = -25°C to +85°C)

Conditions

VCCDR Data Retention Supply voltage 2

1.5

3.3

V

S-CE2 0.2V or

S-CE1 S-VCC - 0.2V

ICCDR Data Retention Supply current 2

S-VCC = 3.0V

2

25

µA S-CE2 0.2V or

S-CE1 S-VCC - 0.2V

tCDR Chip enable setup time

0

ns

tR

Chip enable hold time

tRC

ns

Notes

1. Reference value at TA = 25°C, S-VCC = 3.0V.

2. S-CE1 S-VCC - 0.2V, S-CE2 S-VCC - 0.2V (S-CE1 controlled) or S-CE2

0.2V (S-CE2 controlled).

Data Retention timing chart (S-CE1 Controlled)(1)

Data Retention timing chart (S-CE2 Controlled)

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