LTC1608
POWER REQUIRE E TS The q denotes specifications that apply over the full operating temperature range,
otherwise specifications are at TA = 25°C. (Note 5)
SYMBOL
VDD
VSS
IDD
ISS
PD
PARAMETER
Positive Supply Voltage
Negative Supply Voltage
Positive Supply Current
Nap Mode
Sleep Mode
Negative Supply Current
Nap Mode
Sleep Mode
Power Dissipation
Nap Mode
Sleep Mode
CONDITIONS
(Notes 12, 13)
(Note 12)
CS = RD = 0V
CS = 0V, SHDN = 0V
CS = 5V, SHDN = 0V
CS = RD = 0V
CS = 0V, SHDN = 0V
CS = 5V, SHDN = 0V
CS = RD = 0V
CS = 0V, SHDN = 0V
CS = 5V, SHDN = 0V
MIN TYP MAX
4.75
5.25
– 4.75
– 5.25
q
22
35
1.5
2.4
1
100
q
32
49
1
100
1
100
q
270 420
7.5
12
0.01
1
UNITS
V
V
mA
mA
µA
mA
µA
µA
mW
mW
mW
WU
TI I G CHARACTERISTICS The q denotes specifications that apply over the full operating temperature range,
otherwise specifications are at TA = 25°C. (Note 5)
SYMBOL
PARAMETER
fSMPL(MAX) Maximum Sampling Frequency
tCONV
Conversion Time
tACQ
Acquisition Time
tACQ+CONV(MIN) Throughput Time (Acquisition + Conversion)
t1
CS to RD Setup Time
t2
CS↓ to CONVST↓ Setup Time
t3
SHDN↓ to CS↑ Setup Time
t4
SHDN↑ to CONVST↓ Wake-Up Time
t5
CONVST Low Time
t6
CONVST to BUSY Delay
CONDITIONS
(Notes 11, 14)
(Notes 11, 12, 15)
(Notes 11, 12)
(Notes 11, 12)
CS = Low (Note 12)
(Note 12)
CL = 25pF
t7
Data Ready Before BUSY↑
t8
Delay Between Conversions
t9
Wait Time RD↓ After BUSY↑
t10
Data Access Time After RD↓
(Note 12)
(Note 12)
CL = 25pF
CL = 100pF (Note 11)
t11
Bus Relinquish Time
t12
RD Low Time
(Note 12)
t13
CONVST High Time
(Note 12)
t14
Aperture Delay of Sample-and-Hold
MIN TYP MAX
q 500
600
q 1.0
1.45
1.8
q
400
q
1.67
2
q
0
q 10
q 10
400
q 40
36
q
80
60
q 32
q 200
q –5
25
40
q
50
45
60
q
75
30
50
q
60
q
t10
q 40
2
UNITS
kHz
µs
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: All voltage values are with respect to ground with DGND, OGND
and AGND wired together unless otherwise noted.
Note 3: When these pin voltages are taken below VSS or above VDD, they
will be clamped by internal diodes. This product can handle input currents
greater than 100mA below VSS or above VDD without latchup.
4