M36W108 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M36W108
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
STMicroelectronics
'M36W108' PDF : 35 Pages View PDF
M36W108T, M36W108B
Table 20. Flash Data Polling and Toggle Bits AC Characteristics (1)
(TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V)
Flash Memory Chip
Symbol
Parameter
100
CL = 30pF
120
CL = 100pF
Unit
Min
Max
Min
Max
Write Enable High to DQ7 Valid (Program, W Controlled) 10
2400
10
2400 ms
tWHQ7V Write Enable High to DQ7 Valid (Chip Erase, W
Controlled)
1.0
60
1.0
60
sec
Chip Enable High to DQ7 Valid (Program, EF Controlled) 10
2400
10
2400
µs
tEHQ7V Chip Enable High to DQ7 Valid (Chip Erase, EF
Controlled)
1.0
60
1.0
60
sec
tQ7VQV Q7 Valid to Output Valid (Data Polling)
40
50
ns
Write Enable High to Output Valid (Program)
tWHQV
Write Enable High to Output Valid (Chip Erase)
10
2400
10
2400
µs
1.0
60
1.0
60
sec
Chip Enable High to Output Valid (Program)
tEHQV
Chip Enable High to Output Valid (Chip Erase)
10
2400
10
2400
µs
1.0
60
1.0
60
sec
Note: 1. All other timings are defined in Read AC Characteristics table.
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