M36W108 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M36W108

8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product

STMicroelectronics 

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M36W108T, M36W108B

Table 23. SRAM Low VCC Data Retention Characteristics (1, 2)

(TA = 0 to 70 °C; VCCS = 2.7 V to 3.6 V)

Symbol

Parameter

Test Condition

Min

ICCDR

Supply Current (Data Retention)

VCCS = 3V, E1S ≥ VCCS – 0.2V,

E2S ≥ VCCS – 0.2V or E2S ≤ 0.2V, f = 0

VDR Supply Voltage (Data Retention) E1S ≥ VCCS – 0.2V,E2S ≤ 0.2V, f = 0

2

tCDR Chip Disable to Power Down

E1S ≥ VCCS – 0.2V,E2S ≤ 0.2V, f = 0

0

tR

Operation Recovery Time

5

Note: 1. All other Inputs VIH ≤ VCC – 0.2V or VIL ≤ 0.2V.

2. Sampled only. Not 100% tested.

Max

20

3.6

Unit

µA

V

ns

ms

Figure 20. SRAM Low VCC Data Retention AC Waveforms, E1S Controlled

VCCS

2.7 V

2.2 V

VDR

E1S VSS

tCDR

DATA RETENTION MODE

tR

E1S ≥ VCCS – 0.2V

AI02438

30/35

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