M36W108 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M36W108
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
STMicroelectronics
'M36W108' PDF : 35 Pages View PDF
M36W108T, M36W108B
Table 22. SRAM Write AC Characteristics
(TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCS = 2.7 V to 3.6 V)
SRAM Chip
Symbol
Parameter
100
CL = 100pF
Unit
Min
Max
tAVAV
Write Cycle Time
100
ns
tAVWL
Address Valid to Write Enable Low
0
ns
tAVWH
Address Valid to Write Enable High
80
ns
tWLWH
Write Enable Pulse Width
70
ns
tWHAX
Write Enable High to Address Transition
0
ns
tWHDX
Write Enable High to Input Transition
0
ns
tWHQX
Write Enable High to Output Transition
0
ns
tWLQZ
Write Enable Low to Output Hi-Z
0
30
ns
tAVE1L
Address Valid to Chip Enable 1 Low
0
ns
tAVE2H
Address Valid to Chip Enable 2 High
0
ns
tE1HAX
Chip Enable 1 High to Address Transition
0
ns
tE2LAX
Chip Enable 2 Low to Address Transition
0
ns
tDVWH
Input Valid to Write Enable High
40
ns
tDVE1H
Input Valid to Chip Enable 1 High
40
ns
tDVE2L
Input Valid to Chip Enable 2 Low
40
ns
Figure 17. SRAM Write AC Waveforms, W Controlled
tAVAV
A0-A16
VALID
tAVE1L
tAVWH
E1S
tAVE2H
E2S
tAVWL
tWLWH
tWHAX
W
DQ0-DQ7
tWLQZ
tWHQX
tDVWH
tWHDX
INPUT VALID
Note: Output Enable (G) = Low.
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AI02434
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