M36W416BG View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M36W416BG

16 Mbit (1Mb x16, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

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M36W416TG, M36W416BG

Figure 24. SRAM Low VDDS Data Retention AC Waveforms, E1S or UBS / LBS Controlled

VDDS

E1S or

UBS, LBS

VDDS (min)

DATA RETENTION MODE

tCDR

tR

VDDS (min)

AI07918

Table 24. SRAM Low VDDS Data Retention Characteristic

Symbol

Parameter

Test Condition

IDDDR

Supply Current (Data

Retention)

VDDS = 1.5V, E1S ≥ VDDS – 0.2V,

VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V

VDR

Supply Voltage (Data

Retention)

tCDR Chip Disable to Power Down

tR

Operation Recovery Time

Note: 1. All other Inputs VIH ≤ VDDS –0.2V or VIL ≤ 0.2V.

2. Sampled only. Not 100% tested.

Min Typ Max Unit

3

10 µA

1.5

3.3 V

0

ns

70

ns

45/62

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