M95320-DRE View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'M95320-DRE' PDF : 41 Pages View PDF
DC and AC parameters
8
DC and AC parameters
M95320-DRE
This section summarizes the operating conditions and the DC/AC characteristics of the
device.
Table 9. Cycling performance by groups of 4 bytes
Symbol
Parameter
Test condition
Min.
Max.
Unit
Ncycle
Write cycle endurance(1)
TA ≤ 25 °C, 1.7 V < VCC < 5.5 V
TA = 85 °C, 1.7 V < VCC < 5.5 V
TA = 105 °C, 1.7 V < VCC < 5.5 V
-
4,000,000
-
1,200,000
Write
cycle(2)
-
900,000
1. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where
N is an integer, or for the status register byte (refer also to Section 5.3: Cycling with Error Correction Code (ECC)). The
Write cycle endurance is defined by characterization and qualification.
2. A Write cycle is executed when either a Page Write, a Byte Write, a WRSR, a WRID or an LID instruction is decoded.
When using the Byte Write, the Page Write or the WRID, refer also to Section 5.3: Cycling with Error Correction Code
(ECC).
Table 10. Operating conditions (voltage range R, temperature range 8)
Symbol
Parameter
Conditions
Min. Max. Unit
VCC Supply voltage
-
TA Ambient operating temperature
-
fC
Operating clock frequency
VCC ≥ 2.5 V, capacitive load on Q pin ≤100pF
VCC ≥ 1.7 V, capacitive load on Q pin ≤100pF
1.7 5.5 V
- 40 105 °C
-
10
MHz
-
5
Table 11. Operating conditions (voltage range R, temperature range 8)
for high-speed communications
Symbol
Parameter
Conditions
Min. Max. Unit
VCC Supply voltage
-
4.5 5.5 V
TA Ambient operating temperature
-
- 40 85 °C
fC
Operating clock frequency
VCC ≥ 4.5 V, capacitive load on Q pin ≤ 60 pF
-
20 MHz
30/42
DocID027471 Rev 2
Share Link: 
