MAC223A8X View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'MAC223A8X' PDF : 13 Pages View PDF
NXP Semiconductors
MAC223A8X
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Th ≤ 25 °C; Fig. 1; Fig. 2;
Fig. 3
ITSM
non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IG = 100 mA; T2+ G+
IG = 100 mA; T2+ G-
IG = 150 mA; T2- G+
IG = 100 mA; T2- G-
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
0.8
IT(RMS)
(A)
0.6
aaa-010104
80
IT(RMS)
(A)
60
Min Max Unit
-
600 V
-
20
A
-
190 A
-
230 A
-
180 A2s
-
50
A/µs
-
50
A/µs
-
10
A/µs
-
50
A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-40 125 °C
aaa-010124
0.4
40
0.2
20
0
0
50
100
150
Th (°C)
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
0
10-2
10-1
1
10
surge duration (s)
f = 50 Hz; Th = 25°C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
MAC223A8X
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 13
Share Link: 
