MAC223A8X View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'MAC223A8X' PDF : 13 Pages View PDF
NXP Semiconductors
MAC223A8X
4Q Triac
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; T2+; Fig. 9
VD = 12 V; Tj = 25 °C; T2-; Fig. 9
VT
on-state voltage
IT = 30 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 800 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 95 °C; dIcom/dt = 9 A/
ms; IT = 25 A; gate open circuit
tgt
gate-controlled turn-on ITM = 30 A; VD = 800 V; IG = 0.1 A; dIG/
time
dt = 5 A/µs
Min Typ Max Unit
-
6
50
mA
-
10
50
mA
-
11
50
mA
-
23
75
mA
-
8
40
mA
-
30
60
mA
-
8
40
mA
-
15
60
mA
-
7
30
A
-
12
30
mA
-
1.3 1.55 V
-
0.7 1
V
0.25 0.4 -
V
-
0.1 0.5 mA
100 300 -
V/µs
-
10
-
V/µs
-
2
-
µs
MAC223A8X
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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