MC9S08QA2 View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
MFG CO.
'MC9S08QA2' PDF : 32 Pages View PDF
Electrical Characteristics
Table 13. 3 V 10-Bit ADC Characteristics (continued)
Characteristic
Conditions
Symbol Min Typical1 Max
Unit
Comment
Conversion time
Short sample (ADLSMP=0)
—
(including sample
tADC
time)
Long sample (ADLSMP=1)
—
Sample time
Short sample (ADLSMP=0)
—
tADS
Long sample (ADLSMP=1)
—
10-bit mode
Total unadjusted error
8-bit mode
—
ETUE
—
20
40
—
—
ADCK
cycles
See
MC9S08QA4
Series
Reference
3.5
—
ADCK
Manual for
23.5
—
cycles conversion
time variances
±1.5
±3.5
Includes
LSB2 quantization
±0.7
±1.5
Differential
non-linearity
10-bit mode
8-bit mode
—
±0.5
±1.0
Monotonicity
DNL
—
±0.3
±0.5
LSB2
and no
missing codes
guaranteed
Integral non-linearity
10-bit mode
8-bit mode
—
±0.5
±1.0
INL
LSB2
—
±0.3
±0.5
Zero-scale error
10-bit mode
8-bit mode
EZS
—
±1.5
±2.1
LSB2
VADIN = VSS
—
±0.5
±0.7
Full-scale error
10-bit mode
8-bit mode
0
±1.0
±1.5
EFS
LSB2
VADIN = VDD
0
±0.5
±0.5
Quantization error
10-bit mode
8-bit mode
—
EQ
—
—
±0.5
LSB2
—
±0.5
Input leakage error
10-bit mode
8-bit mode
EIL
0
0
±0.2
±0.1
±4
±1.2
LSB2
Pad leakage3 *
RAS
Temp sensor
slope
–40°C – 25°C
25°C – 85°C
—
1.646
—
m
mV/°C
—
1.769
—
Temp sensor
voltage
25°C
VTEMP25
—
701.2
—
mV
1 Typical values assume VDD = 3.0 V, Temp = 25°C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference
only and are not tested in production.
2 1 LSB = (VREFH – VREFL)/2N
3 Based on input pad leakage current. Refer to pad electricals.
3.11 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
MC9S08QA4 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor
17
Share Link: 
