MC9S08QA2 View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
MFG CO.
'MC9S08QA2' PDF : 32 Pages View PDF
Electrical Characteristics
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see MC9S08QA4 Series Reference Manual.
Table 14. Flash Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
–40°C to 85°C
Vprog/erase
1.8
—
3.6
V
Supply voltage for read operation
Internal FCLK frequency1
VRead
1.8
—
3.6
V
fFCLK
150
—
200
kHz
Internal FCLK period (1/FCLK)
Byte program time (random location)2
Byte program time (burst mode)2
Page erase time2
Mass erase time2
Program/erase endurance3
TL to TH = –40°C to + 85°C
T = 25°C
tFcyc
tprog
tBurst
tPage
tMass
5
10,000
—
9
4
4000
20,000
—
100,000
6.67
—
—
μs
tFcyc
tFcyc
tFcyc
tFcyc
cycles
Data retention4
tD_ret
15
100
—
years
1 The frequency of this clock is controlled by a software setting.
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
3 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08QA4 Series MCU Data Sheet, Rev. 3
18
Freescale Semiconductor
Share Link: 
