MC9S12DG128 View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
MFG CO.
'MC9S12DG128' PDF : 142 Pages View PDF
Device User Guide — 9S12DT128DGV2/D V02.16
Table A-12 NVM Reliability Characteristics1
Conditions are shown in (Table A-4) unless otherwise noted
Num C
Rating
Symbol Min
Typ
Max Unit
Flash Reliability Characteristics
Data retention after 10,000 program/erase cycles at an
1 C average junction temperature of TJavg ≤ 85°C
15
tFLRET
Data retention with <100 program/erase cycles at an
2 C average junction temperature TJavg ≤ 85°C
20
1002
1002
—
Years
—
Number of program/erase cycles
3 C (–40°C ≤ TJ ≤ 0°C)
Number of program/erase cycles
4 C (0°C ≤ TJ ≤ 140°C)
—
10,000
—
nFL
Cycles
—
10,000 100,0003
EEPROM Reliability Characteristics
Data retention after up to 100,000 program/erase cycles
5 C at an average junction temperature of TJavg ≤ 85°C
15
tEEPRET
Data retention with <100 program/erase cycles at an
6 C average junction temperature TJavg ≤ 85°C
20
1002
1002
—
Years
—
Number of program/erase cycles
7 C (–40°C ≤ TJ ≤ 0°C)
Number of program/erase cycles
8 C (0°C < TJ ≤ 140°C)
10,000
—
—
nEEP
Cycles
100,000 300,0003
—
NOTES:
1. TJavg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
3. Spec table quotes typical endurance evaluated at 25°C for this product family, typical endurance at various temperature
can be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please
refer to Engineering Bulletin EB619.
114
Freescale Semiconductor
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