MCF51QH128 View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
MFG CO.
'MCF51QH128' PDF : 68 Pages View PDF
Memories and memory interfaces
Table 17. NVM program/erase timing specifications (continued)
Symbol Description
thversscr Sector Erase high-voltage time
thversblk32k Erase Block high-voltage time for 32 KB
thversblk128k Erase Block high-voltage time for 128 KB
Min.
—
—
—
Typ.
20
20
80
Max.
100
100
400
Unit
Notes
ms
1
ms
1
ms
1
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2 Flash timing specifications — commands
Table 18. Flash command timing specifications
Symbol
trd1blk32k
trd1blk128k
Description
Read 1s Block execution time
• 32 KB data flash
• 128 KB data flash
Min.
Typ.
Max.
Unit
—
—
0.4
ms
—
—
1.4
ms
trd1sec1k Read 1s Section execution time (flash sector)
—
tpgmchk Program Check execution time
—
trdrsrc Read Resource execution time
—
tpgm4 Program Longword execution time
—
Erase Flash Block execution time
tersblk32k
• 32 KB data flash
—
tersblk128k
• 128 KB data flash
—
—
40
μs
—
35
μs
—
35
μs
50
TBD
μs
20
100
ms
80
400
ms
tersscr Erase Flash Sector execution time
Program Section execution time
tpgmsec512
tpgmsec1k
• 512 B flash
• 1 KB flash
—
20
100
ms
—
TBD
TBD
ms
—
TBD
TBD
ms
trd1all Read 1s All Blocks execution time
—
trdonce Read Once execution time
—
tpgmonce Program Once execution time
—
tersall Erase All Blocks execution time
—
tvfykey Verify Backdoor Access Key execution time
—
Program Partition for EEPROM execution time
tpgmpart32k
• 32 KB FlexNVM
—
—
1.8
ms
—
35
μs
50
TBD
μs
100
500
ms
—
35
μs
25
TBD
ms
tsetram8k
tsetram32k
Set FlexRAM Function execution time:
• 8 KB EEPROM backup
• 32 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
TBD
ms
Byte-write to FlexRAM for EEPROM operation
Table continues on the next page...
MCF51QH128 Advance Information Data Sheet, Rev. 0, 05/2011.
Freescale Semiconductor, Inc.
Preliminary
Notes
1
1
1
2
2
1
2
1
27
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