MCF51QH128 View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
MFG CO.
'MCF51QH128' PDF : 68 Pages View PDF
Memories and memory interfaces
Table 20. NVM reliability specifications (continued)
Symbol Description
Min.
tnvmretp100 Data retention after up to 100 cycles
15
nnvmcycp Cycling endurance
10 K
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
tnvmretd1k Data retention after up to 1 K cycles
10
tnvmretd100 Data retention after up to 100 cycles
15
nnvmcycd Cycling endurance
10 K
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
tnvmretee10 Data retention up to 10% of write endurance
10
tnvmretee1 Data retention up to 1% of write endurance
15
Write endurance
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree8k
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
35 K
315 K
1.27 M
10 M
20 M
Typ.1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max.
—
—
Unit
years
cycles
Notes
2
3
—
years
2
—
years
2
—
years
2
—
cycles
3
—
years
2
—
years
2
—
years
2
4
—
writes
—
writes
—
writes
—
writes
—
writes
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on Tjavg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum value assumes all
byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
MCF51QH128 Advance Information Data Sheet, Rev. 0, 05/2011.
Freescale Semiconductor, Inc.
Preliminary
29
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