MCF51QH128 View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
MFG CO.
'MCF51QH128' PDF : 68 Pages View PDF
Memories and memory interfaces
Table 18. Flash command timing specifications (continued)
Symbol Description
teewr8bers Byte-write to erased FlexRAM location execution
time
Byte-write to FlexRAM execution time:
teewr8b8k
teewr8b16k
teewr8b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
Min.
—
—
—
—
Typ.
100
TBD
TBD
TBD
Max.
TBD
TBD
TBD
1.5
Unit
μs
ms
ms
ms
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location
execution time
—
100
TBD
μs
Word-write to FlexRAM execution time:
teewr16b8k
teewr16b16k
teewr16b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
TBD
ms
—
TBD
1.5
ms
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
200
TBD
μs
Longword-write to FlexRAM execution time:
teewr32b8k
teewr32b16k
teewr32b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
TBD
ms
—
TBD
2.7
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
Notes
3
6.4.1.3 Flash (FTFL) current and power specfications
Table 19. Flash (FTFL) current and power specfications
Symbol
IDD_PGM
Description
Worst case programming current in program flash
Typ.
Unit
10
mA
6.4.1.4 Reliability specifications
Table 20. NVM reliability specifications
Symbol Description
tnvmretp10k Data retention after up to 10 K cycles
tnvmretp1k Data retention after up to 1 K cycles
Min.
Program Flash
5
10
Typ.1
TBD
TBD
Max.
—
—
Table continues on the next page...
Unit
years
years
Notes
2
2
MCF51QH128 Advance Information Data Sheet, Rev. 0, 05/2011.
28
Preliminary
Freescale Semiconductor, Inc.
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