MT28C3212P2FL-10B View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT28C3212P2FL-10B' PDF : 47 Pages View PDF
ADDRESS
S_CE1#
S_CE2
S_LB#, S_UB#
S_WE#
DATA-IN
DATA-OUT
2 MEG x 16 PAGE FLASH
128K x 16 SRAM COMBO MEMORY
WRITE CYCLE
(S_WE# CONTROL)
tWC
tAW
tWR
tAS
High-Z
tCW
tLBW, tUBW
tWP
tWHZ
tDW
tDH
DATA VALID
tOW
High-Z
DON’T CARE
WRITE TIMING PARAMETERS
SYMBOL
tWC
tCW
tAW
tLBW, tUBW
tAS
tWP
-10/-11
VCC = 1.65V–1.95V VCC = 1.80V–2.20V
MIN
MAX
MIN
MAX
100
85
100
85
100
85
100
85
0
0
50
50
UNITS
ns
ns
ns
ns
ns
ns
SYMBOL
tWR
tWHZ
tDW
tDH
tOW
-10/-11
VCC = 1.65V–1.95V VCC = 1.80V–2.20V
MIN
MAX
MIN
MAX
0
0
0
15
0
15
50
50
0
0
0
0
UNITS
ns
ns
ns
ns
ns
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
44
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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