128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
PAGE MODE AND STANDARD WORD/BYTE READ OPERATIONS
VIH
ADDRESSES
(A22–A3) VIL
VIH
ADDRESSES
(A2–A0) VIL
Disabled VIH
CEx
Enabled VIL
VIH
OE# VIL
VIH
WE# VIL
DQ0–DQ15 VOH
VOL
VIH
VCC
VIL
VIH
RP# VIL
VIH
BYTE
VIL
tRC
VALID
ADDRESS
VALID VALID
ADDRESS ADDRESS
VALID
ADDRESS
tCWH
tAA
tODC
tACE
tRWH
tOEC
High-Z
tODO
tAOE/
tAOA
tAPA
tOH
VALID VALID VALID
OUTPUT OUTPUT OUTPUT
tOEO
VALID
OUTPUT
High-Z
tCB
tABY
tODB
TIMING PARAMETERS
UNDEFINED
SYMBOL
tRC (32Mb)
tRC (64Mb)
tRC (128Mb)
tAA (32Mb)
tAA (64Mb)
tAA (128Mb)
tACE (32Mb)
tACE (64Mb)
tACE (128Mb)
tAOE
tAOA
tRWH (32Mb)
VCC = 2.7V–3.6V
VCCQ = 2.7V–3.6V
or 4.5V–5.5V
MIN
110
120
150
MAX
110
120
150
110
120
150
50
25
150
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
tRWH (64Mb)
tRWH (128Mb)
tOEC
tOEO
tODC
tODO
tOH
tCB
tABY
tODB
tCWH
tAPA
VCC = 2.7V–3.6V
VCCQ = 2.7V–3.6V
or 4.5V–5.5V
MIN
0
0
0
0
MAX
180
210
35
15
10
1,000
1,000
25
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE: CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined as the first edge of
CE0, CE1, or CE2 that disables the device.
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
44
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.