MT48LC128M4A2P-7EITC View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48LC128M4A2P-7EITC' PDF : 68 Pages View PDF
512Mb: x4, x8, x16 SDRAM
Electrical Specifications
Table 13: DC Electrical Characteristics And Operating Conditions
Notes 1, 5, and 6 apply to entire table; notes appear on page 47; VDD, VDDQ = +3.3V ±0.3V
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current: Any input 0V ≤ VIN ≤ VDD
(All other pins not under test = 0V)
Output leakage current: DQs are disabled;
0V ≤ VOUT ≤ VDDQ
Output levels:
Output high voltage (IOUT = –4mA)
Output low voltage (IOUT = 4mA)
Symbol
VDD, VDDQ
VIH
VIL
II
IOZ
VOH
VOL
Min
3
2
–0.3
–5
–5
2.4
–
Max
3.6
VDD + 0.3
0.8
5
5
–
0.4
Units
V
V
V
µA
µA
V
V
Notes
22
22
26
26
Table 14: IDD Specifications and Conditions
Notes 1, 5, 6, 11, and 13 apply to entire table; notes appear on page 47; VDD, VDDQ = +3.3V ±0.3V
Parameter/Condition
Operating current: Active mode;
Burst = 2; READ or WRITE; tRC = tRC (MIN)
Standby current: power-down mode;
CKE = LOW; All banks idle
Standby current: Active mode; CS# = HIGH;
CKE = HIGH; All banks active after tRCD met;
No accesses in progress
Operating current: Burst mode; Page burst;
READ or WRITE; All banks active
Auto refresh current:
tRFC = tRFC (MIN)
CS# = HIGH; CKE = HIGH
tRFC = 7.81µs
Self refresh current: CKE ≤ 0.2V
Standard
Low power (L)
Symbol
IDD1
IDD2
IDD3
IDD4
IDD5
IDD6
IDD7
IDD7
Max
-7E
-75
120
110
3.5
3.5
45
45
125
115
255
255
6
6
6
6
3
3
Units
mA
mA
mA
mA
mA
mA
mA
mA
Notes
3, 18, 19,
29
29
3, 12, 19,
29
3, 18, 19,
29
3, 18, 19,
29, 30
•
Table 15: Capacitance
Note 2 applies to entire table; notes appear on page 47
Parameter
Input capacitance: CLK
Input capacitance: All other input-only pins
Input/output capacitance: DQs
Symbol
CI1
CI2
CIO
Min
2.5
2.5
4.0
Max
3.5
3.8
6.0
Units
pF
pF
pF
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
44
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