NTLJS2103P View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
'NTLJS2103P' PDF : 8 Pages View PDF
NTLJS2103P
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State (Note 3)
RqJA
Junction−to−Ambient – t ≤ 5 s (Note 3)
RqJA
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = −250 mA
−12
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ
Temperature Coefficient
ID = −250 mA, Ref to 25°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VDS = −12 V, VGS = 0 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = −250 mA
−0.3
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = −4.5, ID = −5.9 A
VGS = −4.5, ID = −3.0 A
VGS = −2.5, ID = −5.3 A
VGS = −2.5, ID = −3.0 A
VGS = −1.8, ID = −2.0 A
VGS = −1.5, ID = −1.0 A
VGS = −1.2, ID = −200 mA
VDS = −6.0 V, ID = −2.0 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz,
VDS = −6.0 V
VGS = −4.5 V, VDS = −9.6 V,
ID = −5.9 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
VSD
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
tRR
ta
tb
QRR
VGS = −4.5 V, VDD = −8.0 V,
ID = −5.9 A, RG = 2.0 W
VGS = 0 V, IS = −1.0 A
TJ = 25°C
TJ = 85°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Max
Unit
65
38
°C/W
180
Typ
Max
Unit
V
−8.0
mV/°C
−1.0
mA
−5.0
±0.1
mA
−0.8
V
2.6
mV/°C
25
40
mW
25
40
35
50
35
50
45
75
60
100
95
400
8.8
S
1157
pF
300
200
12.8
15
nC
0.4
1.6
3.6
15.7
W
8.0
ns
27
74
88
0.62
1.0
V
0.56
27
50
10
ns
17
14
nC
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