NTLJS2103P View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
'NTLJS2103P' PDF : 8 Pages View PDF
NTLJS2103P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1800
1600
1400
1200
1000
800
600
400
200
0
0
VGS = 0 V
TJ = 25°C
Ciss
f = 1 MHz
Coss
Crss
2
4
6
8
10
12
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
5
QT
4
-VDS
3
2 QGS
QGD
12
10
-VGS
8
6
4
1
VDS = −9.6 V
ID = −5.9 A
2
TJ = 25°C
0
0
0
2
4
6
8
10 12 14
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10000
VGS = −4.5 V
VDD = −8.0 V
ID = −5.9 A
100
10
td(off)
tf
tr
td(on)
100
VGS = 0 V
10
TJ = 150°C
TJ = 25°C
1
1
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
0.8
0.7
ID = −250 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Threshold Voltage
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
60
50
40
30
20
10
0
0.001 0.01
0.1
1
10
100 1000
SINGLE PULSE TIME (s)
Figure 12. Single Pulse Maximum Power
Dissipation
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5
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