PCF7936AS View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'PCF7936AS' PDF : 33 Pages View PDF
NXP Semiconductors
Security Transponder (HITAG2)
Product Specification
PCF7936AS
10 DEVICE CHARACTERISTICS
10.1 Electrical Characteristics
Tamb = -40 to +85°C, fSYS = 125kHz, TO = 1/fSYS. Unless otherwise specified
SYMBOL
PARAMETER
CONDITION
Operating Conditions
fRES
Resonance frequency
BW
Bandwidth
BTHR
Magnetic flux density,
Read direction
BPRG
Magnetic flux density, Note 1
For EEPROM programming
m = 0,95, TWRP = 8 TO
BAUT
Magnetic flux density, Note 1
For device authentication
m = 0,95, TWRP = 8 TO
BREAD
MIPRG
LF field absorption in read direction, Note 1 BFIELD = 35 μTPP
Minimum modulation index (m), Note 1
BFIELD = 35 μTPP, TWRP = 8 TO
Write direction, device programming and
authentication
EEPROM
TRET
NWR-CYL
Data retention time
Write endurance, page 1 to 7
Tamb = 50°C
MIN
121
2.3
35
35
35
8
20
100 k
TYP MAX UNIT
129 kHz
kHz
400 μTPP
400 μTPP
400 μTPP
μTPP
95
%
years
cycle
Note
1. Modulation index (m) and LF Field absorption (BREAD) are defined according to Figure 25.
2. Parameters are measured with the Scemtech test equipment STM-1 in a Helmholtz arrangement according to section 11.
Transponder
LF Field
BMIN BMAX
Figure 25. Definition of modulation index (m) and LF field absorption (BREAD)
BMAX - BMIN
m=
BMAX + BMIN
BREAD = BMAX - BMIN
2010 May 04
27
CONFIDENTIAL
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