PHP83N06T View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHP83N06T' PDF : 13 Pages View PDF
Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A
Tj = 25 °C
Tj = 175 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IDR
reverse drain current (DC)
IDRM
pulsed reverse drain current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
EDS(AL) non-repetitive avalanche energy
unclamped inductive load; ID = 65 A;
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω;
starting Tmb = 25 °C
Typ
Max Unit
-
60
V
-
75
A
-
166
W
-
175
°C
9
12
mΩ
-
24
mΩ
Min
Max Unit
-
60
V
-
60
V
-
±20
V
-
75
A
-
59
A
-
240
A
-
166
W
−55
+175 °C
−55
+175 °C
-
75
A
-
240
A
-
211
mJ
9397 750 09122
Product data
Rev. 01 — 11 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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