PHP83N06T View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHP83N06T' PDF : 13 Pages View PDF
Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
120
Pder
(%)
80
03aa16
120
Ider
(%)
80
03ag75
40
40
0
0
50
100
Pder
=
-------P----t--o--t-------
P
×
100
%
t o t ( 25 °C )
150
200
Tmb (oC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
100
150
200
Tmb (ºC)
VGS ≥ 4.5 V
Ider = -I------I---D-------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
ID
RDSon = VDS / ID
(A)
102
03ag66
tp = 10 µs
100 µs
1 ms
10
DC
10 ms
100 ms
1
1
10
102
VDS (V)
Tmb = 25 °C; IDM single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09122
Product data
Rev. 01 — 11 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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