PHP83N06T View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHP83N06T' PDF : 13 Pages View PDF
Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
5
VGS(th)
(V)
4
max
03aa32
10-1
ID
(A)
10-2
03aa35
3
typ
10-3
min typ
max
2
min
10-4
1
10-5
0
-60
0
60
120 Tj (oC) 180
10-6
0
2
4
6
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
03ag71
C
(pF)
Ciss
103
102
10-1
1
Coss
Crss
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09122
Product data
Rev. 01 — 11 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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