PIC16C62X(A)
12.3 DC CHARACTERISTICS:
PIC16LC62X-04 (Commercial, Industrial, Extended)
Param
No.
Sym
Standard Operating Conditions (unless otherwise stated)
Operating temperature –40˚C ≤ TA ≤ +85˚C for industrial and
0˚C ≤ TA ≤ +70˚C for commercial and
–40˚C ≤ TA ≤ +125˚C for extended
Operating voltage VDD range as described in DC spec Table 12-1 and Table 12-2
Characteristic
Min Typ† Max Units
Conditions
D001 VDD
Supply Voltage
3.0 - 6.0 V XT and RC osc configuration
2.5
6.0
LP osc configuration
D002 VDR
RAM Data Retention
Voltage (Note 1)
– 1.5* – V Device in SLEEP mode
D003 VPOR
VDD start voltage to
ensure Power-on Reset
– VSS –
V See section on Power-on Reset for
details
D004 SVDD
VDD rise rate to ensure
Power-on Reset
0.05* –
– V/ms See section on Power-on Reset for
details
D005 VBOR Brown-out Detect Voltage
3.7 4.0 4.3 V BODEN configuration bit is cleared
D010 IDD
D010A
Supply Current (Note 2)
– 1.4 2.5 mA XT and RC osc configuration
FOSC = 2.0 MHz, VDD = 3.0V, WDT
disabled (Note 4)
– 26 53 µA LP osc configuration
FOSC = 32 kHz, VDD = 3.0V, WDT
disabled
∆IWDT
D015 ∆IBOR
∆ICOMP
∆IVREF
WDT Current (Note 5)
– 6.0 15 µA VDD = 3.0V
Brown-out Reset Current
– 350 425 µA BOR enabled, VDD = 5.0V
(Note 5)
Comparator Current for
–
100 µA VDD = 3.0V
each Comparator (Note 5)
VREF Current (Note 5)
–
300 µA VDD = 3.0V
D020 IPD
Power Down Current (Note 3) – 0.7 2 µA VDD=3.0V, WDT disabled
∆IWDT
D023 ∆IBOR
∆ICOMP
∆IVREF
WDT Current (Note 5)
– 6.0 15 µA VDD=3.0V
Brown-out Reset Current
– 350 425 µA BOR enabled, VDD = 5.0V
(Note 5)
Comparator Current for
–
100 µA VDD = 3.0V
each Comparator (Note 5)
VREF Current (Note 5)
–
300 µA VDD = 3.0V
*
These parameters are characterized but not tested.
† Data in "Typ" column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1=external square wave, from rail to rail; all I/O pins tristated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is mea-
sured with the part in SLEEP mode, with all I/O pins in hi-impedence state and tied to VDD to VSS.
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be
estimated by the formula Ir = VDD/2Rext (mA) with Rext in kΩ.
5: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.
© 1997 Microchip Technology Inc.
Preliminary
DS30235F-page 83