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RC28F800C3TC70 View Datasheet(PDF) - Intel

Part Name
Description
MFG CO.
'RC28F800C3TC70' PDF : 68 Pages View PDF
Intel£ Advanced+ Boot Block Flash Memory (C3)
Figure 9. Write Operations Waveform
Address [A]
CE# [E]
W2
WE# [W]
OE# [G]
Data [D/Q]
W1
RP# [P]
Vpp [V]
W5
W3
W4
W10
W8
W6
W9
W7
8.3
Erase and Program Timings
Table 21. Erase and Program Timings
Symbol
Parameter
VPP
Note
1.65 V–3.6 V
Typ
Max
tBWPB
4-KW Parameter Block
Word Program Time
1, 2, 3 0.10 0.30
tBWMB
32-KW Main Block
Word Program Time
1, 2, 3 0.8
2.4
Word Program Time for 0.13
and 0.18 Micron Product
1, 2, 3
12
200
tWHQV1 / tEHQV1
Word Program Time for 0.25
Micron Product
1, 2, 3
22
200
tWHQV2 / tEHQV2
4-KW Parameter Block
Erase Time
1, 2, 3 0.5
4
tWHQV3 / tEHQV3
32-KW Main Block
Erase Time
1, 2, 3
1
5
tWHRH1 / tEHRH1 Program Suspend Latency
1,3
5
10
tWHRH2 / tEHRH2 Erase Suspend Latency
1,3
5
20
NOTES:
1. Typical values measured at TA= +25 °C and nominal voltages.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
11.4 V–12.6 V
Typ
Max
0.03 0.12
0.24
1
8
185
8
185
0.4
4
0.6
5
5
10
5
20
Unit
s
s
µs
µs
s
s
µs
µs
Datasheet
47
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