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S9418 View Datasheet(PDF) - Summit Microelectronics

Part Name
Description
MFG CO.
'S9418' PDF : 10 Pages View PDF
1 2 3 4 5 6 7 8 9 10
S9418
ABSOLUTE MAXIMUM RATINGS
VDD to GND .................................................................... -0.5V to +7V
Digital Inputs to Gnd ............................................. -0.5V to VDD+0.5V
Analog Inputs to ground ....................................... -0.5V to VDD+0.5V
Digital Outputs to Gnd .......................................... -0.5V to VDD+0.5V
Analog Outputs to Gnd ......................................... -0.5V to VDD+0.5V
Temperature Under Bias ........................................... -55°C to +125°C
Storage Temperature ................................................ -65°C to +150°C
Lead Soldering (10 Sec Max) .................................................... 300°C
Stresses listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions outside those
listed in the operational sections of this specification is not implied.
Exposure to any absolute maximum rating for extended periods may
affect device performance and reliability.
RECOMMENDED OPERATING CONDITIONS
Condition
Temperature
VDD
Min
-40°C
+2.7V
Max
+85°C
+5.5V
2023 PGM T2 1.1
RELIABILITY CHARACTERISTICS (over recommended operating conditions unless otherwise specified)
Symbol
VZAP
ILTH
TDR
NEND
Parameter
ESD Susceptibility
Latch-up
Data Retention
Endurance
Min
2000
100
100
1,000,000
Max
Unit
V
mA
Years
Storage Cycles
DC ELECTRICAL CHARACTERISTICS (over recommended operating conditions unless otherwise specified)
Symbol
Parameter
IDD
Supply current during store
(note 1)
ISB Standby supply current
IIH
Input leakage current
IIL
Input leakage current
VIH High level input voltage
VIL Low level input voltage
VOH High level output voltage
VOL Low level output voltage
Conditions
Min
Typ
Max
Unit
CS = VIL
1.8
23.50
mA
CS = VIH
VIN = VDD
VIN = 0V
4.5V VCC 5.5V
VCC 4.5V
4.5V VCC 5.5V
260
500
µA
<1
10
µA
<1
10
µA
2
0.9 × VCC
0
VDD
V
VDD
V
0.8
V
VCC 4.5V
IOH = 400µA
IOL = 1mA, VDD = 5V;
IOL = 0.4mA, VDD = 2.7V
0
VDD 0.3
0.1 × VCC
V
V
0.4
V
Note 1: IDD is the supply current drawn while the EEPROM is being updated.
Typical TA = 25ºC and VCC = 5.0V.
2023 2.2 8/2/00
6
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