Electrical characteristics
Table 17. I/O consumption (continued)
Symbol
C
Parameter
Conditions1
Value2
Min
Typ
Max
Unit
IRMSFST
CC
D Root
CL =
VDD =
—
—
22
mA
medium 25 pF, 40 5.0 V ±
square I/O MHz
10%,
current for
PAD3V5V
FAST
configurati
CL =
25 pF, 64
=0
—
—
33
on
MHz
CL =
100 pF, 40
—
—
56
MHz
CL =
VDD =
—
—
14
25 pF, 40 3.3 V ± 10
MHz
%,
PAD3V5V
CL =
25 pF, 64
=1
—
—
20
MHz
CL =
100 pF, 40
MHz
—
—
35
IAVGSEG
SR
D
Sum of all VDD = 5.0 V ± 10%,
—
—
70
mA
the static PAD3V5V = 0
I/O current
within a
VDD = 3.3 V ± 10%,
—
—
65
supply
PAD3V5V = 1
segment
1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to125 °C, unless otherwise specified
2 All values need to be confirmed during device validation.
3 Stated maximum values represent peak consumption that lasts only a few ns during I/O transition.
3.7 nRSTIN electrical characteristics
The device implements a dedicated bidirectional RESET pin.
MPC5607B Microcontroller Data Sheet, Rev. 3
Freescale Semiconductor
27
Preliminary—Subject to Change Without Notice