EiceDRIVERTM SIL
1EDI2004AS
Functional Description
The TTOFF delays and plateau voltage are fully programmable using the corresponding SPI commands. Too
small delays will not be visible as plateau on the output signal, but may change the slew rate from VCC2 to
plateau. For a Regular Turn-Off sequence, the TTOFF delay is defined by bit field SRTTOF.RTVAL. Setting this
field to 00H completely disables the TTOFF function for all Regular Turn-Off sequences (but this has no effect
on Safe Turn-Off sequences). The plateau level is defined by SRTTOF.GPR. If this function is to be activated, a
sufficient value for the delay time has to be programmed.
For a Safe Turn-Off sequence, the TTOFF delay is defined by bit field SSTTOF.STVAL. Setting this field to 00H
completely disables the TTOFF function for all Safe Turn-Off sequences (but this has no effect on Regular Turn-
Off sequences). If this function is to be activated, a sufficient value for the delay time has to be programmed.
The plateau level is defined by SSTTOF.GPS.
The timing of a Safe Turn-Off event is in the clock domain of the main secondary oscillator (OSC2). The timing
of a Regular Turn-Off event is in the clock domain of the Start-Stop Oscillator (SSOSC2), leading to high
accuracy and low PWM distortion
When using the TTOFF function (with a non-zero delay), the PWM command is received on pin INP is delayed
by the programmed delay time (Figure 13).
For pulses larger than the TTOFF delay (tPULSE > tTTOFF + tAMCDel +1/2 SSOSC cycles), the output pulse width is
kept identical to the input pulse width.
For smaller pulses (tPULSE < tTTOFF + tAMCDel +1/2 SSOSC cycles), the output pulse is identical to the programmed
delay. The minimum pulse width delivered by the device to the IGBT is therefore the programmed delay time
extended by two SSOSC cycles.
The device allows for external booster voltage compensation at the IGBT gate. When bit SCFG.VBEC is cleared,
the voltage at TOFF at the plateau corresponds to the programmed value. When bit SCFG.VBEC is set, an
additional VBE (base emitter junction voltage of an internal pn diode) is substracted from the programmed
voltage at TOFF in order to compensate for the VBE of an external booster.
Data Sheet
38
Rev. 2.0
2019-01-16