22NM60ND View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

22NM60ND

Automotive-grade N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in a TO-220FP package

STMicroelectronics 

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STF22NM60ND

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VDS

Drain-source voltage

600

VGS

Gate- source voltage

±25

ID(1)

Drain current (continuous) at TC = 25 °C

17

Drain current (continuous) at TC = 100 °C

10

IDM(1)(2)

Drain current (pulsed)

68

PTOT

Total dissipation at TC = 25 °C

30

dv/dt(3)

Peak diode recovery voltage slope

40

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink

(t=1 s;TC= 25 °C)

2500

Tstg

Storage temperature

TJ

Operating junction temperature

- 55 to 150

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 17 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS; VDS(peak) ≤ V(BR)DSS

Symbol

Rthj-case

Rthj-amb

Table 3. Thermal data

Parameter

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Value

4.17

62.5

Unit

V

V

A

A

W

V/ns

V

°C

Unit

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)

8.5

A

Single pulse avalanche energy

EAS

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

610

mJ

DocID026895 Rev 2

3/13

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