22NM60ND View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

22NM60ND

Automotive-grade N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in a TO-220FP package

STMicroelectronics 

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STF22NM60ND

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions Min. Typ. Max. Unit

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A, VGS = 0

ISD = 17 A, VDD = 60 V

di/dt=100 A/µs

(see Figure 16)

ISD = 17 A,VDD = 60 V

di/dt=100 A/µs,

TJ = 150 °C

(see Figure 16)

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

17 A

68 A

1.6 V

150

ns

0.90

µC

13

A

240

ns

2

µC

16

A

DocID026895 Rev 2

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