22NM60ND View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
22NM60ND
STMicroelectronics
'22NM60ND' PDF : 13 Pages View PDF
Electrical characteristics
2
Electrical characteristics
STF22NM60ND
(TCASE = 25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
dv/dt(1)
IDSS
IGSS
VGS(th)
RDS(on)
Drain source voltage slope
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source
on-resistance
VDD= 480 V, ID= 17 A,
VGS= 10 V
VDS = 600 V
VDS = 600 V, TC=125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 8.5 A
1. Characteristic value at turn off on inductive load
Value
Unit
Min. Typ. Max.
600
V
36
V/ns
10 µA
100 µA
±100 nA
3
4
5
V
0.170 0.220 Ω
4/13
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
- 1800 -
pF
90
pF
8
pF
Coss
(1)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V -
300
-
pF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RG Gate input resistance
VDD =300 V, ID = 8.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 19),
(see Figure 14)
-
18
-
ns
16
ns
70
ns
48
ns
VDD = 480 V, ID = 17 A,
VGS = 10 V,
(see Figure 15)
-
60
nC
13
nC
30
-
nC
f =1 MHz Gate DC Bias=0
Test signal level = 20 mV
-
3
-
Ω
Open drain
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
DocID026895 Rev 2
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