2ED21091S06F View Datasheet(PDF) - Infineon Technologies
Part Name
Description
MFG CO.
'2ED21091S06F' PDF : 26 Pages View PDF
2ED21091S06F
650 V half bridge gate driver with integrated bootstrap diode
Recommended safe operating area
Figure 22 Negative VS transient SOA for 2ED21091S06F @ VBS=15 V
Even though the 2ED21091S06F has been shown able to handle these large negative VS transient conditions, it
is highly recommended that the circuit designer always limit the negative VS transients as much as possible by
careful PCB layout and component use.
5.13
Higher headroom for input to output signal transmission with logic
operation upto -11 V
If there is not enough voltage for the level shifter to transmit a valid signal to the high side. High side driver
doesn’t turn on. The level shifter circuit is with respect to COM (refer to Block Diagram on page 4), the voltage
from VB to COM is the supply voltage of level shifter. Under the condition of VS is negative voltage with respect to
COM, the voltage of VS - COM is decreased, as shown in Figure 23. There is a minimum operational supply voltage
of level shifter, if the supply voltage of level shifter is too low, the level shifter cannot pass through IN signal to
HO. The specification of VS is –11 V as the internal structure allows a voltage difference of 15 V between Vcc and
COM pins. If VB – VS voltage is different, the minimum VS voltage changes accordingly.
VS
- 11 V
COM
Figure 23 Headroom for HV level shifter data transmission
Datasheet
www.infineon.com/soi
18 of 26
V 2.22
2020-07-02
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