2ED21091S06F View Datasheet(PDF) - Infineon Technologies
Part Name
Description
MFG CO.
'2ED21091S06F' PDF : 26 Pages View PDF
2ED21091S06F
650 V half bridge gate driver with integrated bootstrap diode
5.14
Maximum switching frequency
The 2ED21091S06F is capable of switching at higher frequencies as compared to standard half-bridge or high
side / low side gate drivers. It is essential to ensure that the component is not thermally overloaded when
operating at higher frequencies. This can be checked by means of the thermal resistance junction to ambient and
the calculation or measurement of the dissipated power. The thermal resistance is given in the datasheet
(section 4) and refers to a specific layout. Changes of this layout may lead to an increased thermal resistance,
which will reduce the total dissipated power of the driver IC. One should therefore do temperature
measurements in order to avoid thermal overload under application relevant conditions of ambient temperature
and housing.
The maximum chip temperature TJ can be calculated with
= Pd ∙ ℎ + _ , where TA_max is the maximum ambient temperature.
The dissipated power Pd by the driver IC is a combination of several sources. These are explained in detail in the
application note “2ED21091S06F (HVICs)”
Here is the example of the figures which estimates the gate driver IC junction temperature when switching a given
MOSFET at different switching frequencies.
150
Vbus = 400 V
125
Vbus = 200 V
100
75
50
25
25
125 225 325 425 525
Frequency (kHz)
*Assumptions for above curves: LLC topology, Power switch = IPP60R600P6, Ta = 25 °C, VBUS = 400 V, VCC = 12 V,
Rgon = 3.9 Ω, Rgoff = 1 Ω
Figure 24 Estimated TJ vs. Frequencies
Datasheet
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V 2.22
2020-07-02
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