2ED21091S06F View Datasheet(PDF) - Infineon Technologies
Part Name
Description
MFG CO.
'2ED21091S06F' PDF : 26 Pages View PDF
2ED21091S06F
650 V half bridge gate driver with integrated bootstrap diode
Description
The 2ED21091S06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low
side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise
immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC = 15 V)
on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic
latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS
or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC
MOSFET or IGBT in the high side configuration, which operate up to 650 V.
VCC
IN
Integrated
RBS DBS
1 VCC
VB 8
2 IN
CDT RDT
3 DT/SD
HO 7
VS 6
4 COM
LO 5
Up to 650V
TO LOAD
2ED21091S06F
*Bootstrap diode is monolithically integrated
*Please refer to our application notes and design tips for proper circuit board layout
Figure 1 Typical application block diagram
Summary of feature comparison of the 2ED210x family:
Table 1
Part No.
Input
logic
2ED2106S06F
2ED21064S06J
2ED2108S06F
2ED21084S06J
HIN, LIN
HIN, LIN
2ED2109S06F
IN, SD
2ED21094S06J
Cross
conduction
prevention
logic
No
Yes
Yes
2ED21091S06F IN, DT/SD Yes
Deadtime
Ground pins tON / tOFF Package
None
COM
VSS / COM
Internal 540 ns COM
Programmable
VSS / COM
540 ns - 5000 ns
Internal 540 ns COM
Programmable
VSS / COM
540 ns - 5000 ns
Programmable
COM
540 ns - 2700 ns
200 ns /
200 ns
DSO - 8
DSO - 14
DSO - 8
DSO - 14
DSO - 8
740 ns /
200 ns
DSO - 14
DSO – 8
Datasheet
www.infineon.com/soi
2 of 26
V 2.22
2020-07-02
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