2ED21091S06F View Datasheet(PDF) - Infineon Technologies
Part Name
Description
MFG CO.
'2ED21091S06F' PDF : 26 Pages View PDF
2ED21091S06F
650 V half bridge gate driver with integrated bootstrap diode
5
Application information and additional details
5.1
IGBT / MOSFET gate drive
The 2ED21091S06F HVIC is designed to drive MOSFET or IGBT power devices. Figure 4 and Figure 5 illustrate
several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used
to drive the gate of the power switch, is defined as IO. The voltage that drives the gate of the external power switch
is defined as VHO for the high-side power switch and VLO for the low-side power switch; this parameter is
sometimes generically called VOUT and in this case does not differentiate between the high-side or low-side output
voltage.
Figure 4 HVIC Sourcing current
Figure 5 HVIC Sinking current
5.2
Switching and timing relationships
The relationships between the input and output signals of the 2ED21091S06F are illustrated below in Figure 6
and Figure 7. From these figures, we can see the definitions of several timing parameters (i.e. tON, tOFF, tR, and tF)
associated with this device.
Figure 6 Switching timing diagram
Figure 7 Input/output logic diagram
Datasheet
www.infineon.com/soi
9 of 26
V 2.22
2020-07-02
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