2ED2109 (4) S06F (J)
650 V half bridge gate driver with integrated bootstrap diode
Description
The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and
low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and
noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC =
15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no
parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with
standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power
MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.
VCC
IN
SD
Integrated
RBS DBS
1 VCC
VB 8
2 IN
HO 7
3 SD
VS 6
4 COM
LO 5
2ED2109S06F
Up to 650V
TO LOAD
VCC
IN
SD
VSS
Integrated
RBS DBS
1 VCC
2 IN
3 SD
RDT
4 DT
5 VSS
6 COM
7 LO
14
VB 13
HO 12
VS 11
10
9
8
2ED21094S06J
* Bootstrap diode is monolithically integrated
* Please refer to our application notes and design tips for proper circuit board layout.
Figure 1 Typical application block diagram
Up to 650V
TO LOAD
Summary of feature comparison of the 2ED210x family:
Table 1
Part No.
Input
logic
2ED2106S06F
2ED21064S06J
2ED2108S06F
2ED21084S06J
HIN, LIN
HIN, LIN
2ED2109S06F
IN, SD
2ED21094S06J
Cross
conduction
prevention
logic
No
Yes
Yes
2ED21091S06F IN, DT/SD Yes
Deadtime
Ground pins tON / tOFF Package
None
COM
VSS / COM
Internal 540 ns COM
Programmable
VSS / COM
540 ns - 5000 ns
Internal 540 ns COM
Programmable
VSS / COM
540 ns - 5000 ns
Programmable
COM
540 ns - 2700 ns
DSO - 8
DSO - 14
200 ns /
200 ns DSO - 8
DSO - 14
DSO - 8
740 ns /
200 ns
DSO - 14
DSO – 8
Datasheet
www.infineon.com/soi
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V 2.022
2020-07-02