2ED2109S06F View Datasheet(PDF) - Infineon Technologies
Part Name
Description
MFG CO.
'2ED2109S06F' PDF : 26 Pages View PDF
2ED2109 (4) S06F (J)
650 V half bridge gate driver with integrated bootstrap diode
4.4
Dynamic electrical characteristics
VCC = VBS = 15 V, VSS = COM, TA = 25 oC and CL = 1000 pF unless otherwise specified.
Table 6
Dynamic electrical characteristics
Symbol Definition
tON Turn-on propagation delay
tOFF Turn-off propagation delay
tsd Shut-down propagation delay
tR Turn-on rise time
tF Turn-off fall time
MT Delay matching time (HS & LS turn-on/off)
DT Dead time
MDT Matching Dead time
Min. Typ. Max. Units Test Conditions
—
740 1030
—
200
300
—
200
300
VIN = 0 V or 5 V
—
100
150 ns
VS = 0 V
—
35
80
—
—
70
350 540 730
RDT = 0 Ω
4
5
6
us RDT = 200 kΩ
—
0
70
RDT = 0
ns
—
0
600
RDT = 200 kΩ
Datasheet
www.infineon.com/soi
8 of 26
V 2.022
2020-07-02
Share Link: 
