2N7002F View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'2N7002F' PDF : 12 Pages View PDF
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
2N7002F
TO-236AB plastic surface-mounted package; 3 leads
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
drain-source voltage
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
VGS
VGSM
ID
gate-source voltage
peak gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
tp ≤ 50 µs; pulsed; duty cycle = 25 %
Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; see Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Tsp = 25 °C; see Figure 1
Tj
junction temperature
Source-drain diode
IS
source current
ISM
peak source current
Tsp = 25 °C
Tsp = 25 °C; pulsed; tp ≤ 10 µs
Version
SOT23
Min
Max Unit
-
60
V
-
60
V
-
±30
V
-
±40
V
-
475
mA
-
300
mA
-
1.9
A
-
0.83 W
−65
+150 °C
−65
+150 °C
-
475
mA
-
1.9
A
2N7002F_3
Product data sheet
Rev. 03 — 28 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 12
Share Link: 
