2N7002F View Datasheet(PDF) - Philips Electronics

Part Name

Description

MFG CO.

2N7002F

N-channel TrenchMOS FET

Philips Electronics 

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Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

1

IS

(A)

0.8

03ai17

0.6

0.4

0.2

150 °C

Tj = 25 °C

0

0.2

0.4

0.6

0.8

1

VSD (V)

Tj = 25 °C and 150 °C; VGS = 0 V

Fig 13. Source current as a function of source-drain

voltage; typical values

102

C

(pF)

03ai18

Ciss

10

Coss

Crss

1

10-1

1

10

102

VDS (V)

VGS = 0 V; f = 1 MHz

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

2N7002F_3

Product data sheet

Rev. 03 — 28 April 2006

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

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