2N7002F View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'2N7002F' PDF : 12 Pages View PDF
Philips Semiconductors
120
Pder
(%)
80
03aa17
120
Ider
(%)
80
2N7002F
N-channel TrenchMOS FET
03aa25
40
40
0
0
50
100
150
200
Tsp (°C)
Pder = P--------P----t--o--t-------- × 100 %
tot(25 °C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature
10
ID
(A)
1
Limit RDSon = VDS / ID
0
0
50
100
150
200
Tsp (°C)
Ider = -I-------I---D--------- × 100 %
D(25 °C)
Fig 2. Normalized continuous drain current as a
function of solder point temperature
03ai11
tp = 10 µ s
100 µs
10-1
10-2
1
DC
10
VDS (V)
1 ms
10 ms
100 ms
102
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
2N7002F_3
Product data sheet
Rev. 03 — 28 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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