2N7002F View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'2N7002F' PDF : 12 Pages View PDF
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS
drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
ton
turn-on time
toff
turn-off time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 48 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±15 V; VDS = 0 V
VGS = 10 V; ID = 500 mA; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8
ID = 300 mA; VDS = 30 V; VGS = 10 V;
see Figure 11 and 12
VGS = 0 V; VDS = 10 V; f = 1 MHz;
see Figure 14
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG = 50 Ω; RGS = 50 Ω
IS = 300 mA; VGS = 0 V; see Figure 13
IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V
Min Typ Max Unit
60 -
-
V
55 -
-
V
1
2
0.6 -
-
-
2.5 V
-
V
2.75 V
-
0.01 1
µA
-
-
10 µA
-
10 100 nA
-
0.78 2
Ω
-
1.45 3.7 Ω
-
1.2 4
Ω
-
0.69 -
nC
-
0.1 -
nC
-
0.27 -
nC
-
31 50 pF
-
6.8 30 pF
-
3.5 10 pF
-
2.5 10 ns
-
11 15 ns
-
0.85 1.5 V
-
30 -
ns
-
30 -
nC
2N7002F_3
Product data sheet
Rev. 03 — 28 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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