AO4922
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=250uA, VGS=0V
30
V
VDS=24V, VGS=0V
TJ=125°C
0.01 0.1
mA
6
20
VDS=0V, VGS= ±12V
0.1 µA
VDS=VGS ID=250µA
1.5 1.8 2.4
V
VGS=4.5V, VDS=5V
40
A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=10V, ID=9A
VGS=4.5V, ID=7A
Forward Transconductance
VDS=5V, ID=9A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode + Schottky Continuous Current
TJ=125°C
13 15.8
mΩ
20.2 25.2
15 18.5 mΩ
78
S
0.38 0.5
V
4
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
1980 2574 pF
317
pF
Crss
Reverse Transfer Capacitance
111
pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.3 2.0
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
33.0 43
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=9A
15.0
nC
5.3
nC
Qgd
Gate Drain Charge
6.0
nC
tD(on)
Turn-On DelayTime
5.5
ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.7Ω,
5.5
ns
RGEN=3Ω
27.0
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=9A, dI/dt=300A/µs
4.3
ns
11
13
ns
Qrr
Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/µs
7
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0:Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.